MJE13006 NTE Electronics
Артикул
MJE13006
Бренд
NTE Electronics
Описание
T-NPN SI- HIV SW, Bipolar (BJT) Transistor NPN 300 V 8 A 4MHz 80 W Through Hole TO-220
Цена
276 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJE13006.jpg
Supplier Device Package
TO-220
Power - Max
80 W
Voltage - Collector Emitter Breakdown (Max)
300 V
Current - Collector (Ic) (Max)
8 A
Transistor Type
NPN
Vce Saturation (Max) @ Ib, Ic
3V @ 2A, 8A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
8 @ 2A, 5V
Package / Case
TO-220-3
Standard Package
1
Other Names
2368-MJE13006
Series
SWITCHMODE™
Package
Bag
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 150°C (TJ)
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Frequency - Transition
4MHz
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