BDV65B onsemi
Артикул
BDV65B
Бренд
onsemi
Описание
TRANS NPN DARL 100V 10A TO-218, Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A - 125 W Through Hole SOT-93
Цена
205 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BDV65B.jpg
Supplier Device Package
SOT-93
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Power - Max
125 W
Frequency - Transition
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
Base Product Number
BDV65
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-218-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
REACH Status
REACH Unaffected
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