FDA18N50 onsemi
Артикул
FDA18N50
Бренд
onsemi
Описание
MOSFET N-CH 500V 19A TO3PN, N-Channel 500 V 19A (Tc) 239W (Tc) Through Hole TO-3PN
Цена
589 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDA18N50.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
265mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
239W (Tc)
Supplier Device Package
TO-3PN
Other Names
2156-FDA18N50-OS,ONSFSCFDA18N50
Series
UniFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FDA18
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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