FDMC0310AS onsemi
Артикул
FDMC0310AS
Бренд
onsemi
Описание
MOSFET N-CH 30V 19A/21A 8MLP, N-Channel 30 V 19A (Ta), 21A (Tc) 2.4W (Ta), 36W (Tc) Surface Mount 8-MLP (3.3x3.3)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDMC0310AS.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3165 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 36W (Tc)
Supplier Device Package
8-MLP (3.3x3.3)
Other Names
FDMC0310ASCT,FDMC0310ASDKR,2156-FDMC0310AS-OS,FAIFSCFDMC0310AS,FDMC0310ASTR
Series
PowerTrench®, SyncFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Base Product Number
FDMC0310
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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