FDT55AN06LA0 onsemi
Артикул
FDT55AN06LA0
Бренд
onsemi
Описание
MOSFET N-CH 60V 12.1A SOT223-4, N-Channel 60 V 12.1A (Tc) 8.9W (Tc) Surface Mount SOT-223-4
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FDT55AN06LA0.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
12.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
46mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1130 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
8.9W (Tc)
FET Type
N-Channel
Supplier Device Package
SOT-223-4
Other Names
FDT55AN06LA0DKR,FDT55AN06LA0TR,FDT55AN06LA0CT
Series
PowerTrench®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FDT55
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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