FGA50N100BNTD2 onsemi
Артикул
FGA50N100BNTD2
Бренд
onsemi
Описание
IGBT 1000V 50A 156W TO3P, IGBT NPT and Trench 1000 V 50 A 156 W Through Hole TO-3P
Цена
773 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGA50N100BNTD2.jpg
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
1000 V
Power - Max
156 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
75 ns
IGBT Type
NPT and Trench
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 60A
Current - Collector Pulsed (Icm)
200 A
Switching Energy
-
Gate Charge
257 nC
Td (on/off) @ 25°C
34ns/243ns
Input Type
Standard
Supplier Device Package
TO-3P
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
450
Base Product Number
FGA50N100
RoHS Status
ROHS3 Compliant
Test Condition
600V, 60A, 10Ohm, 15V
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