FGA60N65SMD onsemi
Артикул
FGA60N65SMD
Бренд
onsemi
Описание
IGBT FIELD STOP 650V 120A TO3P, IGBT Field Stop 650 V 120 A 600 W Through Hole TO-3P
Цена
1 023 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/FGA60N65SMD.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
120 A
Voltage - Collector Emitter Breakdown (Max)
650 V
Power - Max
600 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
47 ns
IGBT Type
Field Stop
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 60A
Current - Collector Pulsed (Icm)
180 A
Switching Energy
1.54mJ (on), 450µJ (off)
Gate Charge
189 nC
Td (on/off) @ 25°C
18ns/104ns
Supplier Device Package
TO-3P
Other Names
FGA60N65SMD-ND,ONSONSFGA60N65SMD,2156-FGA60N65SMD-OS,FGA60N65SMDFS
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
FGA60N65
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
Test Condition
400V, 60A, 3Ohm, 15V
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