FQA11N90C-F109 onsemi
Артикул
FQA11N90C-F109
Бренд
onsemi
Описание
MOSFET N-CH 900V 11A TO3P, N-Channel 900 V 11A (Tc) 300W (Tc) Through Hole TO-3P
Цена
859 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQA11N90C-F109.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
TO-3P
Other Names
FQA11N90CF109,2156-FQA11N90C-F109-OS,FQA11N90C_F109-ND,ONSFSCFQA11N90C-F109,FQA11N90C_F109
Series
QFET®
Package
Tube
Part Status
Last Time Buy
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
FQA11
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
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