FQD1N80TM onsemi
Артикул
FQD1N80TM
Бренд
onsemi
Описание
MOSFET N-CH 800V 1A DPAK, N-Channel 800 V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252AA
Цена
140 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQD1N80TM.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
195 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Supplier Device Package
TO-252AA
Other Names
2156-FQD1N80TM-OS,FQD1N80TM-ND,ONSONSFQD1N80TM,FQD1N80TMDKR,FQD1N80TMCT,FQD1N80TMTR
Series
QFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FQD1N80
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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