FQD7N10LTM onsemi
Артикул
FQD7N10LTM
Бренд
onsemi
Описание
MOSFET N-CH 100V 5.8A DPAK, N-Channel 100 V 5.8A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA
Цена
121 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/FQD7N10LTM.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
Supplier Device Package
TO-252AA
Other Names
FQD7N10LTMTR,FQD7N10LTMCT,FQD7N10LTMDKR,FQD7N10LTM-ND
Series
QFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Base Product Number
FQD7N10
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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