HGTG10N120BND onsemi
Артикул
HGTG10N120BND
Бренд
onsemi
Описание
IGBT NPT 1200V 35A TO247-3, IGBT NPT 1200 V 35 A 298 W Through Hole TO-247-3
Цена
713 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTG10N120BND.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
35 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
298 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
70 ns
IGBT Type
NPT
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector Pulsed (Icm)
80 A
Switching Energy
850µJ (on), 800µJ (off)
Gate Charge
100 nC
Td (on/off) @ 25°C
23ns/165ns
Supplier Device Package
TO-247-3
Other Names
ONSONSHGTG10N120BND,2156-HGTG10N120BND-OS
Series
-
Package
Tube
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Base Product Number
HGTG10N120
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
Test Condition
960V, 10A, 10Ohm, 15V
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