HGTP3N60A4D onsemi
Артикул
HGTP3N60A4D
Бренд
onsemi
Описание
IGBT 600V 17A 70W TO220AB, IGBT - 600 V 17 A 70 W Through Hole TO-220-3
Цена
245 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - IGBTs - Single, IGBT транзисторы - одиночные
Image
files/HGTP3N60A4D.jpg
Input Type
Standard
Current - Collector (Ic) (Max)
17 A
Voltage - Collector Emitter Breakdown (Max)
600 V
Power - Max
70 W
REACH Status
REACH Unaffected
Reverse Recovery Time (trr)
29 ns
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 3A
Current - Collector Pulsed (Icm)
40 A
Switching Energy
37µJ (on), 25µJ (off)
Gate Charge
21 nC
Td (on/off) @ 25°C
6ns/73ns
Supplier Device Package
TO-220-3
Other Names
HGTP3N60A4D_NL-ND,HGTP3N60A4D-NDR,HGTP3N60A4D_NL
Series
-
Package
Tube
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
HGTP3N60
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Test Condition
390V, 3A, 50Ohm, 15V
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