MJ11030 onsemi
Артикул
MJ11030
Бренд
onsemi
Описание
TRANS NPN DARL 90V 50A TO-3, Bipolar (BJT) Transistor NPN - Darlington 90 V 50 A - 300 W Through Hole TO-204 (TO-3)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/MJ11030.jpg
Supplier Device Package
TO-204 (TO-3)
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (Max)
90 V
Vce Saturation (Max) @ Ib, Ic
3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)
2mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 25A, 5V
Power - Max
300 W
Frequency - Transition
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
Base Product Number
MJ110
Series
-
Package
Tray
Part Status
Obsolete
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AE
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
100
REACH Status
REACH Unaffected
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