NDBA180N10BT4H onsemi
Артикул
NDBA180N10BT4H
Бренд
onsemi
Описание
MOSFET N-CH 100V 180A D2PAK, N-Channel 100 V 180A (Ta) 200W (Tc) Surface Mount D?PAK (TO-263)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NDBA180N10BT4H.jpg
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
180A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V, 15V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6950 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
FET Type
N-Channel
Supplier Device Package
D?PAK (TO-263)
Other Names
ONSONSNDBA180N10BT4H,2156-NDBA180N10BT4H-ONTR
Series
-
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
Base Product Number
NDBA18
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
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