NTH4L020N120SC1 onsemi
Артикул
NTH4L020N120SC1
Бренд
onsemi
Описание
SICFET N-CH 1200V 102A TO247, N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L
Цена
6 986 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTH4L020N120SC1.jpg
Supplier Device Package
TO-247-4L
Technology
SiCFET (Silicon Carbide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
220 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
2943 pF @ 800 V
FET Feature
-
Moisture Sensitivity Level (MSL)
Not Applicable
Base Product Number
NTH4L020
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-NTH4L020N120SC1
Standard Package
450
REACH Status
REACH Unaffected
Power Dissipation (Max)
510W (Tc)
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