NTH4LN019N65S3H onsemi
Артикул
NTH4LN019N65S3H
Бренд
onsemi
Описание
POWER MOSFET, N-CHANNEL, SUPERFE, N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-4
Цена
3 507 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NTH4LN019N65S3H.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
19.3mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id
4V @ 14.3mA
Gate Charge (Qg) (Max) @ Vgs
282 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
15993 pF @ 400 V
FET Feature
-
Supplier Device Package
TO-247-4
REACH Status
REACH Unaffected
Standard Package
450
Series
SuperFET® III
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
488-NTH4LN019N65S3H
Power Dissipation (Max)
625W (Tc)
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