NVD6416ANLT4G onsemi
Артикул
NVD6416ANLT4G
Бренд
onsemi
Описание
MOSFET N-CH 100V 19A DPAK, N-Channel 100 V 19A (Tc) 71W (Tc) Surface Mount DPAK-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NVD6416ANLT4G.jpg
Supplier Device Package
DPAK-3
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Power Dissipation (Max)
71W (Tc)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 25 V
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
74mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±20V
Other Names
2156-NVD6416ANLT4G,ONSONSNVD6416ANLT4G
Base Product Number
NVD641
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
FET Feature
-
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