NP100P04PDG-E1-AY Renesas
Артикул
NP100P04PDG-E1-AY
Бренд
Renesas
Описание
MOSFET P-CH 40V 100A TO263, P-Channel 40 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
Цена
811 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/NP100P04PDG-E1-AY.jpg
Supplier Device Package
TO-263
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Power Dissipation (Max)
1.8W (Ta), 200W (Tc)
FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
15100 pF @ 10 V
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
320 nC @ 10 V
Vgs (Max)
±20V
Other Names
559-NP100P04PDG-E1-AYDKR,-1161-NP100P04PDG-E1-AYCT,559-NP100P04PDG-E1-AYCT,NP100P04PDG-E1-AY-ND,559-NP100P04PDG-E1-AYTR
Base Product Number
NP100P04
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
800
FET Feature
-
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