IMD2AT108 Rohm Semiconductor
Артикул
IMD2AT108
Бренд
Rohm Semiconductor
Описание
TRANS NPN/PNP PREBIAS 0.3W SMT6, Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6
Цена
81 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Транзисторы - биполярные (BJT) - массивы, с предварительным сопряжением
Image
files/IMD2AT108.jpg
Mounting Type
Surface Mount
Power - Max
300mW
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
100mA
Current - Collector Cutoff (Max)
500nA
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA, 5V
Frequency - Transition
250MHz
Resistor - Base (R1)
22kOhms
Standard Package
3,000
Other Names
IMD2AT108DKR,IMD2AT108TR,IMD2AT108-ND,IMD2AT108CT
HTSUS
8541.21.0095
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Package / Case
SC-74, SOT-457
Supplier Device Package
SMT6
Base Product Number
IMD2AT108
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Resistor - Emitter Base (R2)
22kOhms
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