R6035KNZ1C9 Rohm Semiconductor
Артикул
R6035KNZ1C9
Бренд
Rohm Semiconductor
Описание
MOSFET N-CHANNEL 600V 35A TO247, N-Channel 600 V 35A (Tc) 379W (Tc) Through Hole TO-247
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R6035KNZ1C9.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
102mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
30
Other Names
R6035KNZ1C9DKRINACTIVE,R6035KNZ1C9TR-ND,R6035KNZ1C9CT-ND,R6035KNZ1C9INACTIVE,R6035KNZ1C9CT,R6035KNZ1C9DKR-ND,R6035KNZ1C9TR,R6035KNZ1C9DKR
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
379W (Tc)
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