R6025JNZ4C13 Rohm Semiconductor
Артикул
R6025JNZ4C13
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 600V 25A TO247G, N-Channel 600 V 25A (Tc) 306W (Tc) Through Hole TO-247G
Цена
791 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/R6025JNZ4C13.jpg
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id
7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 15 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
30
HTSUS
8541.29.0095
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247G
Base Product Number
R6025
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
Power Dissipation (Max)
306W (Tc)
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