RD3S100CNTL1 Rohm Semiconductor
Артикул
RD3S100CNTL1
Бренд
Rohm Semiconductor
Описание
MOSFET N-CH 190V 10A TO252, N-Channel 190 V 10A (Tc) 85W (Tc) Surface Mount TO-252
Цена
351 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/RD3S100CNTL1.jpg
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
190 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Standard Package
2,500
Other Names
RD3S100CNTL1TR,RD3S100CNTL1DKR,RD3S100CNTL1CT
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Base Product Number
RD3S100
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
85W (Tc)
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