SCT2080KEC Rohm Semiconductor
Артикул
SCT2080KEC
Бренд
Rohm Semiconductor
Описание
SICFET N-CH 1200V 40A TO247, N-Channel 1200 V 40A (Tc) 262W (Tc) Through Hole TO-247
Цена
4 275 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCT2080KEC.jpg
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
FET Type
N-Channel
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
2080 pF @ 800 V
FET Feature
-
Standard Package
30
Other Names
SCT2080KECU
Series
-
Package
Tube
Part Status
Obsolete
Operating Temperature
175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
SCT2080
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Power Dissipation (Max)
262W (Tc)
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