SCT50N120 STMicroelectronics
Артикул
SCT50N120
Бренд
STMicroelectronics
Описание
SICFET N-CH 1200V 65A HIP247, N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
Цена
6 516 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SCT50N120.jpg
Base Product Number
SCT50
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
122 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 400 V
FET Feature
-
Other Names
-1138-SCT50N120,497-16598-5
REACH Status
REACH Unaffected
Series
-
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
HiP247™
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Power Dissipation (Max)
318W (Tc)
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