TP65H035WS Transphorm
Артикул
TP65H035WS
Бренд
Transphorm
Описание
GANFET N-CH 650V 46.5A TO247-3, N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3
Цена
3 529 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/TP65H035WS.jpg
Technology
GaNFET (Cascode Gallium Nitride FET)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
California Prop 65
Warning Information
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Series
-
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
TP65H035
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
30
Power Dissipation (Max)
156W (Tc)
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