TP65H015G5WS Transphorm
Артикул
TP65H015G5WS
Бренд
Transphorm
Описание
650 V 95 A GAN FET, N-Channel 650 V 93A (Tc) 266W (Tc) Through Hole TO-247-3
Цена
5 386 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
SuperGaN™
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
93A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5218 pF @ 400 V
FET Feature
-
Technology
GaNFET (Gallium Nitride)
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Package
Tube
Part Status
Active
Mounting Type
Through Hole
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1707-TP65H015G5WS
Standard Package
30
Operating Temperature
-55°C ~ 150°C (TJ)
California Prop 65
Warning Information
Power Dissipation (Max)
266W (Tc)
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