SI1012R-T1-GE3 VISHAY
Артикул
SI1012R-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 20V 500MA SC75A, N-Channel 20 V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A
Цена
96 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1012R-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Vgs (Max)
±6V
FET Feature
-
Power Dissipation (Max)
150mW (Ta)
Standard Package
3,000
Other Names
SI1012R-T1-GE3DKR,SI1012RT1GE3,SI1012R-T1-GE3TR,SI1012R-T1-GE3CT
HTSUS
8541.21.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75A
Base Product Number
SI1012
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
Gate Charge (Qg) (Max) @ Vgs
0.75 nC @ 4.5 V
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