SI1401EDH-T1-GE3 VISHAY
Артикул
SI1401EDH-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 12V 4A SC70-6, P-Channel 12 V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
Цена
74 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI1401EDH-T1-GE3.jpg
Standard Package
3,000
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 8 V
Vgs (Max)
±10V
FET Feature
-
Other Names
SI1401EDH-T1-GE3DKR,SI1401EDH-T1-GE3TR,SI1401EDHT1GE3,SI1401EDH-T1-GE3CT
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6
Base Product Number
SI1401
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
Power Dissipation (Max)
1.6W (Ta), 2.8W (Tc)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут