SI3129DV-T1-GE3 VISHAY
Артикул
SI3129DV-T1-GE3
Бренд
VISHAY
Описание
P-CHANNEL 80 V (D-S) MOSFET TSOP, P-Channel 80 V 3.8A (Ta), 5.4A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP
Цена
122 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI3129DV-T1-GE3.jpg
Power Dissipation (Max)
2W (Ta), 4.2W (Tc)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs
82.7mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
805 pF @ 40 V
FET Feature
-
Supplier Device Package
6-TSOP
Standard Package
3,000
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SI3129DV-T1-GE3CT,742-SI3129DV-T1-GE3TR,742-SI3129DV-T1-GE3DKR
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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