SI4483ADY-T1-GE3 VISHAY
Артикул
SI4483ADY-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 30V 19.2A 8SO, P-Channel 30 V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SOIC
Цена
219 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4483ADY-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta), 5.9W (Tc)
Mounting Type
Surface Mount
Standard Package
2,500
Other Names
SI4483ADY-T1-GE3CT,SI4483ADY-T1-GE3DKR,SI4483ADY-T1-GE3TR,SI4483ADYT1GE3
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4483
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
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