SI4488DY-T1-GE3 VISHAY
Артикул
SI4488DY-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 150V 3.5A 8SO, N-Channel 150 V 3.5A (Ta) 1.56W (Ta) Surface Mount 8-SOIC
Цена
369 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI4488DY-T1-GE3.jpg
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA (Min)
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
1.56W (Ta)
Standard Package
2,500
Other Names
SI4488DY-T1-GE3TR,SI4488DYT1GE3,SI4488DY-T1-GE3CT,SI4488DY-T1-GE3DKR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4488
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
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