SI7157DP-T1-GE3 VISHAY
Артикул
SI7157DP-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 20V 60A PPAK SO-8, P-Channel 20 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Цена
279 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SI7157DP-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
1.4V @ 250µA
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
22000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SI7157DP-T1-GE3DKR,SI7157DP-T1-GE3-ND,SI7157DP-T1-GE3CT,SI7157DP-T1-GE3TR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SI7157
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
625 nC @ 10 V
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