SIA416DJ-T1-GE3 VISHAY
Артикул
SIA416DJ-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 100V 11.3A PPAK, N-Channel 100 V 11.3A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Цена
127 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIA416DJ-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
295 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SIA416DJT1GE3,SIA416DJ-T1-GE3DKR,SIA416DJ-T1-GE3CT,SIA416DJ-T1-GE3TR
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SC-70-6
Supplier Device Package
PowerPAK® SC-70-6
Base Product Number
SIA416
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
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