SIA427ADJ-T1-GE3 VISHAY
Артикул
SIA427ADJ-T1-GE3
Бренд
VISHAY
Описание
MOSFET P-CH 8V 12A PPAK SC70-6, P-Channel 8 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6
Цена
100 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIA427ADJ-T1-GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
2300 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
19W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SIA427ADJ-T1-GE3DKR,SIA427ADJ-T1-GE3TR,SIA427ADJ-T1-GE3CT,SIA427ADJ-T1-GE3-ND
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
PowerPAK® SC-70-6
Supplier Device Package
PowerPAK® SC-70-6
Base Product Number
SIA427
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 5 V
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