SIA436DJ-T1-GE3 VISHAY
Артикул
SIA436DJ-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 8V 12A PPAK SC70-6, N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
Цена
114 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SIA436DJ-T1-GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 15.7A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 5 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
1508 pF @ 4 V
FET Feature
-
Standard Package
3,000
Other Names
SIA436DJT1GE3,SIA436DJ-T1-GE3TR,SIA436DJ-T1-GE3CT,SIA436DJ-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6
Supplier Device Package
PowerPAK® SC-70-6
Base Product Number
SIA436
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
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