SISH108DN-T1-GE3 VISHAY
Артикул
SISH108DN-T1-GE3
Бренд
VISHAY
Описание
MOSFET N-CH 20V 14A PPAK1212-8SH, N-Channel 20 V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
Цена
127 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SISH108DN-T1-GE3.jpg
Standard Package
3,000
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
±16V
FET Feature
-
Other Names
SISH108DN-T1-GE3TR,SISH108DN-T1-GE3CT,SISH108DN-T1-GE3DKR
HTSUS
8541.29.0095
Series
TrenchFET® Gen II
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8SH
Supplier Device Package
PowerPAK® 1212-8SH
Base Product Number
SISH108
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
1.5W (Ta)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут