SIZ916DT-T1-GE3 VISHAY
Артикул
SIZ916DT-T1-GE3
Бренд
VISHAY
Описание
MOSFET 2N-CH 30V 16A POWERPAIR, Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 40A 22.7W, 100W Surface Mount 8-PowerPair® (6x5)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/SIZ916DT-T1-GE3.jpg
Other Names
SIZ916DT-T1-GE3TR,SIZ916DTT1GE3,SIZ916DT-T1-GE3CT,SIZ916DT-T1-GE3DKR
Standard Package
3,000
FET Type
2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16A, 40A
Rds On (Max) @ Id, Vgs
6.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1208pF @ 15V
FET Feature
Standard
HTSUS
8541.29.0095
ECCN
EAR99
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (6x5)
Base Product Number
SIZ916
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
22.7W, 100W
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