SQD50N05-11L_GE3 VISHAY
Артикул
SQD50N05-11L_GE3
Бренд
VISHAY
Описание
MOSFET N-CH 50V 50A TO252AA, N-Channel 50 V 50A (Tc) 75W (Tc) Surface Mount TO-252AA
Цена
312 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQD50N05-11L_GE3.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2106 pF @ 25 V
FET Feature
-
Standard Package
2,000
Other Names
SQD50N05-11L_GE3CT,SQD50N05-11L_GE3-ND,SQD50N05-11L-GE3-ND,SQD50N05-11L_GE3DKR,SQD50N05-11L-GE3,SQD50N05-11L_GE3TR
HTSUS
8541.29.0095
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Base Product Number
SQD50
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
Power Dissipation (Max)
75W (Tc)
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