SQJ872EP-T1_GE3 VISHAY
Артикул
SQJ872EP-T1_GE3
Бренд
VISHAY
Описание
MOSFET N-CH 150V 24.5A PPAK SO-8, N-Channel 150 V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8
Цена
239 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SQJ872EP-T1_GE3.jpg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
24.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
35.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1045 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Mounting Type
Surface Mount
Standard Package
3,000
Other Names
SQJ872EP-T1_GE3DKR,SQJ872EP-T1_GE3CT,SQJ872EP-T1_GE3TR
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Base Product Number
SQJ872
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут