EPC2019 EPC
Артикул
EPC2019
Бренд
EPC
Описание
GANFET N-CH 200V 8.5A DIE, N-Channel 200 V 8.5A (Ta) - Surface Mount Die
Цена
632 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/EPC2019.jpg
Technology
GaNFET (Gallium Nitride)
Power Dissipation (Max)
-
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.5A (Ta)
Rds On (Max) @ Id, Vgs
50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
270 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)
5V
Supplier Device Package
Die
Package / Case
Die
REACH Status
REACH Unaffected
Series
eGaN®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0040
Other Names
917-1087-1,917-1087-2,917-1087-6
Standard Package
1,000
Vgs (Max)
+6V, -4V
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