SPP11N80C3XKSA1 Infineon Technologies
Артикул
SPP11N80C3XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 800V 11A TO220-3, N-Channel 800 V 11A (Tc) 156W (Tc) Through Hole PG-TO220-3-1
Цена
563 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/SPP11N80C3XKSA1.jpg
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 100 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000683158,SPP11N80C3XTIN,SPP11N80C3IN-NDR,SPP11N80C3IN-ND,SPP11N80C3,SPP11N80C3IN,SPP11N80C3XTIN-ND,SPP11N80C3X,SPP11N80C3XK
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
SPP11N80
Power Dissipation (Max)
156W (Tc)
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