IPD650P06NMATMA1 Infineon Technologies
Артикул
IPD650P06NMATMA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 22A TO252-3, P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
Цена
324 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD650P06NMATMA1.jpg
Other Names
IPD650P06NMATMA1-ND,448-IPD650P06NMATMA1DKR,448-IPD650P06NMATMA1CT,448-IPD650P06NMATMA1TR,SP004987256
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
83W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
65mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPD650
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3-313
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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