IPT010N08NM5ATMA1 Infineon Technologies
Артикул
IPT010N08NM5ATMA1
Бренд
Infineon Technologies
Описание
TRENCH 40<-<100V PG-HSOF-8, N-Channel 80 V 43A (Ta), 425A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8
Цена
1 480 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Series
OptiMOS™
Moisture Sensitivity Level (MSL)
1 (Unlimited)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Input Capacitance (Ciss) (Max) @ Vds
16000 pF @ 40 V
Current - Continuous Drain (Id) @ 25°C
43A (Ta), 425A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.05mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
223 nC @ 10 V
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 375W (Tc)
Standard Package
2,000
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerSFN
Supplier Device Package
PG-HSOF-8
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP005560711,448-IPT010N08NM5ATMA1DKR,448-IPT010N08NM5ATMA1TR,448-IPT010N08NM5ATMA1CT
FET Feature
-
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