AUIRLR120N Infineon Technologies
Артикул
AUIRLR120N
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 10A DPAK, N-Channel 100 V 10A (Tc) 48W (Tc) Surface Mount D-PAK (TO-252AA)
Цена
96 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/AUIRLR120N.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
48W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
185mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Other Names
SP001521880
Mounting Type
Surface Mount
Standard Package
3,000
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-PAK (TO-252AA)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±16V
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