IRL1004SPBF Infineon Technologies
Артикул
IRL1004SPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 130A D2PAK, N-Channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL1004SPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Rds On (Max) @ Id, Vgs
6.5mOhm @ 78A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5330 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
SP001568352,*IRL1004SPBF
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±16V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут