BC807-25 Infineon Technologies
Артикул
BC807-25
Бренд
Infineon Technologies
Описание
BIPOLAR GEN PURPOSE TRANSISTOR, Bipolar (BJT) Transistor PNP 45 V 800 mA 100MHz 310 mW Surface Mount SOT-23-3 (TO-236)
Цена
3 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - Bipolar (BJT) - Single, Транзисторы - биполярные (BJT) - одиночные
Image
files/BC807-25.jpg
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Supplier Device Package
SOT-23-3 (TO-236)
Power - Max
310 mW
Transistor Type
PNP
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA, 1V
REACH Status
REACH Unaffected
Standard Package
1
Other Names
NEXNEXBC807-25,2156-BC807-25
Series
-
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0075
Frequency - Transition
100MHz
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