BSB017N03LX3 G Infineon Technologies
Артикул
BSB017N03LX3 G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 32A/147A 2WDSON, N-Channel 30 V 32A (Ta), 147A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSB017N03LX3-G.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.8W (Ta), 57W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs
1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7800 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
BSB017N03LX3 GDKR-ND,BSB017N03LX3GTR,BSB017N03LX3GXT,BSB017N03LX3 GCT,BSB017N03LX3 GTR-ND,BSB017N03LX3 GDKR,BSB017N03LX3GCT,BSB017N03LX3 GCT-ND,BSB017N03LX3GDKR,BSB017N03LX3G,BSB017N03LX3 G-ND,SP000604468,BSB017N03LX3GXUMA1
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
3-WDSON
Supplier Device Package
MG-WDSON-2, CanPAK M™
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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