BSC021N08NS5ATMA1 Infineon Technologies
Артикул
BSC021N08NS5ATMA1
Бренд
Infineon Technologies
Описание
MOSFET TRENCH 80V TSON-8, N-Channel 80 V 100A (Tc) 214W (Tc) Surface Mount PG-TSON-8-3
Цена
777 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC021N08NS5ATMA1.jpg
Other Names
448-BSC021N08NS5ATMA1TR,448-BSC021N08NS5ATMA1DKR,SP001793410,448-BSC021N08NS5ATMA1CT,BSC021N08NS5ATMA1-ND
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
214W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.8V @ 146µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8600 pF @ 40 V
FET Feature
Standard
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
BSC021
Mounting Type
Surface Mount
Series
OptiMOS™, StrongIRFET™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TSON-8-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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