BSO119N03S Infineon Technologies
Артикул
BSO119N03S
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 9A 8DSO, N-Channel 30 V 9A (Ta) 1.56W (Ta) Surface Mount PG-DSO-8
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSO119N03S.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.56W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Rds On (Max) @ Id, Vgs
11.9mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1730 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
BSO119N03SXT,SP000077657,2156-BSO119N03S-ITTR,IFEINFBSO119N03S,BSO119N03S-ND,BSO119N03SINDKR,BSO119N03SINCT,BSO119N03SINTR,BSO119N03SFUMA1
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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