BSP613P Infineon Technologies
Артикул
BSP613P
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 2.9A SOT223-4, P-Channel 60 V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Цена
241 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSP613P.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
2.9A (Ta)
Rds On (Max) @ Id, Vgs
130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP000012301,BSP613PT
Mounting Type
Surface Mount
Standard Package
1,000
Series
SIPMOS®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4-21
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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